SK Hynix beats Samsung by launching its 321-layer TLC NAND flash memory first

SK Hynix Achieves Milestone with 321-Layer NAND Chips

In a nutshell: SK Hynix has made a groundbreaking advancement in the memory chip industry by mass-producing triple-level cell NAND with an impressive 321 layers. This achievement positions SK Hynix ahead of its rival Samsung and promises higher capacity memory at an affordable price point.

SK Hynix made waves with the release of its new 1-terabit 4D NAND chips, boasting a new industry record. Building on the success of its 238-layer NAND launch less than a year ago, the company’s latest 321-layer NAND chips are expected to revolutionize storage density for consumer and enterprise SSDs.

The introduction of densely packed chips opens the door to more cost-effective SSDs with capacities exceeding 100TB. This innovative NAND technology is particularly suited for AI data centers, as well as other performance-intensive applications that demand energy-efficient storage solutions.

SK Hynix employed cutting-edge process optimizations to accommodate over 300 layers in a single NAND chip. The company’s “Three Plugs” technology enables the simultaneous connection of three memory layer vertical channels through an optimized electrical linking process, known for its manufacturing efficiency and utilization of low-stress materials with automatic alignment correction.

However, the complex layering posed challenges in terms of stress and alignment, which SK Hynix resolved by developing new low-stress materials and implementing automatic alignment correction processes during manufacturing.

The enhanced production efficiency of the new process, which is 59% more efficient than the previous generation, promises better performance and cost-effectiveness in the market. SK Hynix claims that the 321-layer chips offer 12% faster data transfers, 13% faster reading speeds, and over 10% improved power efficiency compared to the 238-layer NAND.

SK Hynix is gearing up to deliver these cutting-edge storage devices to customers in the first half of 2025, initially targeting the AI market. Subsequently, ultra-high capacity SSDs catering to gaming, media editing, and data storage needs are expected to follow suit.

In response to SK Hynix’s milestone, Samsung is already working on 400-layer NAND chips set to debut by 2026. The tech giant aims to introduce bonded vertical NAND technology by 2030, enabling even denser chips with over 1,000 layers and SSDs potentially exceeding 200TB. Japan’s Kioxia is also pursuing similar advancements.